AMORPHOUS-SILICON THIN-FILM TRANSISTORS WITH VERY HIGH FIELD-EFFECT MOBILITY

被引：14

作者：

LIN, JL

SAH, WJ

LEE, SC

机构：

[1] Department of Electrical Engineering, National Taiwan University, Taipei, Taiwan

来源：

IEEE ELECTRON DEVICE LETTERS | 1991年 / 12卷 / 03期

关键词：

D O I：

10.1109/55.75730

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Amorphous-silicon (a-Si:H) thin-film transistors (TFT's) with very high field-effect mobility of 5.1 cm2/V . s have been successfully fabricated. To our knowledge, it is the highest field-effect mobility of this type of TFT reported to date. The device shows an ON/OFF current ratio exceeding 10(5) and a subthreshold swing of 0.5 V/decade.

引用

页码：120 / 121

页数：2

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