DETECTION OF SINGLE-ATOM EXTRACTION AND DEPOSITION EVENTS DURING NANOLITHOGRAPHIC PROCESSING OF SILICON WITH A SCANNING TUNNELING MICROSCOPE

被引：3

作者：

GREY, F ^{[1
]}

HUANG, D ^{[1
]}

KOBAYASHI, A ^{[1
]}

SNYDER, EJ ^{[1
]}

UCHIDA, H ^{[1
]}

AONO, M ^{[1
]}

机构：

[1] RIKEN INST PHYS & CHEM RES,SURFACE & INTERFACE LAB,WAKO,SAITAMA 351,JAPAN

来源：

PROCEEDINGS OF THE JAPAN ACADEMY SERIES B-PHYSICAL AND BIOLOGICAL SCIENCES | 1993年 / 69卷 / 05期

关键词：

SCANNING TUNNELING MICROSCOPE; NANOLITHOGRAPHY; ATOM MANIPULATION;

D O I：

10.2183/pjab.69.101

中图分类号：

O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];

学科分类号：

07 ; 0710 ; 09 ;

摘要：

By monitoring the vertical motion of the tip of a scanning tunneling microscope (STM) during atomic manipulation on a surface, we have been able to detect for the first time Angstrom-scale displacements of the tip which are associated with the extraction and deposition of atoms on the surface, due to voltage pulses applied to the sample. The temporal distribution of these tip displacements during and after the application of the voltage pulse yields important information about the nature of the modification process.

引用

页码：101 / 106

页数：6

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