NOVEL TECHNIQUE FOR P-TYPE NITROGEN DOPED ZNSE EPITAXIAL LAYERS

We report a novel technique to obtain p-type ZnSe layers doped with nitrogen. The layers were grown in a low-pressure metalorganic vapor phase epitaxy system using ammonia as the dopant source. A rapid thermal anneal was used to enhance the activation of the nitrogen acceptors. Net acceptor concentration values as high as 3 X 10(16)/cm3 were obtained from capacitance-voltage measurements and the profile was uniform over the thickness of the epitaxial layers. The 7 K photoluminescence spectrum was dominated by the acceptor bound exciton peak; the donor-acceptor pair spectra were also observed.