ANTISTRUCTURE DISORDER AND ITS RELATION TO DISLOCATIONS IN III-V SEMICONDUCTORS

被引：3

作者：

FIGIELSKI, T

机构：

来源：

CRYSTAL RESEARCH AND TECHNOLOGY | 1987年 / 22卷 / 10期

关键词：

D O I：

10.1002/crat.2170221009

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

页码：1263 / 1269

页数：7

共 29 条

[11] KINK FORMATION AND MIGRATION AS DEPENDENT ON THE FERMI LEVEL [J].

HAASEN, P .

JOURNAL DE PHYSIQUE, 1979, 40 :111-116

[12] EL2 DISTRIBUTIONS IN DOPED AND UNDOPED LIQUID ENCAPSULATED CZOCHRALSKI GAAS [J].

HOLMES, DE ;

CHEN, RT ;

YANG, J .

APPLIED PHYSICS LETTERS, 1983, 42 (05) :419-421

[13] AN EVALUATION OF THE THERMAL AND ELASTIC-CONSTANTS AFFECTING GAAS CRYSTAL-GROWTH [J].

JORDAN, AS .

JOURNAL OF CRYSTAL GROWTH, 1980, 49 (04) :631-642

[14] IDENTIFICATION OF THE 0.82-EV ELECTRON TRAP, EL2 IN GAAS, AS AN ISOLATED ANTISITE ARSENIC DEFECT [J].

KAMINSKA, M ;

SKOWRONSKI, M ;

KUSZKO, W .

PHYSICAL REVIEW LETTERS, 1985, 55 (20) :2204-2207

[15] ESR DETECTION OF ANTISITE LATTICE-DEFECTS IN GAP, CDSIP2, AND ZNGEP2 [J].

KAUFMANN, U ;

SCHNEIDER, J ;

RAUBER, A .

APPLIED PHYSICS LETTERS, 1976, 29 (05) :312-313

[16]

KENNEDY TA, 1984, APPL PHYS LETT, V44, P1090

[17]

Kroger F A., 1964, CHEM IMPERFECT CRYST

[18] FERMI ENERGY CONTROL OF VACANCY COALESCENCE AND DISLOCATION DENSITY IN MELT-GROWN GAAS [J].

LAGOWSKI, J ;

GATOS, HC ;

AOYAMA, T ;

LIN, DG .

APPLIED PHYSICS LETTERS, 1984, 45 (06) :680-682

[19]

LAGOWSKI J, 1984, 13TH P INT C DEF SEM, P73

[20]

Maeda K., 1985, DISLOCATIONS SOLIDS, P425

← 1 2 3 →