NEW CALCULATIONAL METHOD FOR EPITAXIAL ENERGY - APPLICATION TO AN AXIAL COMMENSURATE INTERFACE

被引：22

作者：

PAIK, SM

SCHULLER, IK

机构：

[1] Department of Physics, B-019, University of California, San Diego, La Jolla, CA 92093

来源：

PHYSICAL REVIEW LETTERS | 1990年 / 64卷 / 16期

关键词：

D O I：

10.1103/PhysRevLett.64.1923

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

A new mapping technique is introduced which allows the study of epitaxy in systems that are commensurate or incommensurate. This method is applied to the epitaxy of fcc(111)/bcc(110) which is commensurate in one direction and incommensurate in the other. The mapping technique predicts a new epitaxial orientation, in good agreement with recent experimental results. The use of second-order perturbation theory in conjunction with the mapping technique predicts a change in epitaxial orientations as a function of island size and stiffness of overlayer lattice. © 1990 The American Physical Society.

引用

页码：1923 / 1926

页数：4

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