HIGH-RESOLUTION CHANNELING STIM IN A THIN CRYSTAL

被引：12

作者：

CHOLEWA, M ^{[1
]}

BENCH, G ^{[1
]}

SAINT, A ^{[1
]}

LEGGE, GJF ^{[1
]}

机构：

[1] INST NUCL PHYS,PL-31342 KRAKOW,POLAND

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 1991年 / 54卷 / 1-3期

关键词：

D O I：

10.1016/0168-583X(91)95543-M

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

Scanning Transmission Ion Microscopy (STIM) has been combined with Channeling Contrast Microscopy (CCM) to examine damage in a thin crystal (4-mu-m thick Si) with high spatial resolution (200 nm). Such measurements require very low beam currents (< 1 fA), whereas the crystal was damaged only by relatively large currents (nA).

引用

页码：397 / 400

页数：4

共 14 条

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