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ANALYSIS OF SURFACE CONTAMINANTS ON GALLIUM-ARSENIDE AND SILICON BY HIGH-RESOLUTION TIME-OF-FLIGHT SECONDARY ION MASS-SPECTROMETRY

被引：25
作者：
NIEHUIS, E
HELLER, T
JURGENS, U
BENNINGHOVEN, A
机构：
来源：
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1989年 / 7卷 / 03期
关键词：
D O I：
10.1116/1.584777
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：512 / 516
页数：5
相关论文
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[2]  
Benninghoven A., 1987, SECONDARY ION MASS S
[3]   ANALYSIS OF SURFACE CONTAMINANTS BY PLASMA CHROMATOGRAPHY MASS SPECTROSCOPY [J].
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[5]  
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[6]   DESIGN AND PERFORMANCE OF A REFLECTRON BASED TIME-OF-FLIGHT SECONDARY ION MASS-SPECTROMETER WITH ELECTRODYNAMIC PRIMARY ION MASS SEPARATION [J].
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HELLER, T ;
FELD, H ;
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JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1987, 5 (04) :1243-1246
[7]  
PENKER V, IN PRESS SPECTROCH B
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