G-TENSOR OF THE INTERSTITIAL OXYGEN AND THE BROKEN SI-O BOND IN SILICON DIOXIDE - MO MODEL CALCULATION

被引：2

作者：

HABERLANDT, H

WECKNER, HJ

GOBSCH, G

REINHOLD, J

机构：

[1] TECH HSCH ILMENAU,TECH ELEKTR BAUELEMENTE,DDR-63 ILMENAU,GER DEM REP

[2] KARL MARX UNIV,SEKT CHEM,DDR-701 LEIPZIG,GER DEM REP

来源：

PHYSICA STATUS SOLIDI B-BASIC RESEARCH | 1979年 / 93卷 / 01期

关键词：

D O I：

10.1002/pssb.2220930169

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

[No abstract available]

引用

页码：K71 / K75

页数：5

共 14 条

[1] ELECTRON-STATES IN ALPHA-QUARTZ - SELF-CONSISTENT PSEUDOPOTENTIAL CALCULATION [J].

CHELIKOWSKY, JR ;

SCHLUTER, M .

PHYSICAL REVIEW B, 1977, 15 (08) :4020-4029

[2]

EBERT I, 1973, PHYS STATUS SOLIDI B, V60, pK103, DOI 10.1002/pssb.2220600255

[3] CALCULATION OF G-TENSOR AND SI-29 HYPERFINE TENSORS OF E'1 CENTER IN SILICON DIOXIDE [J].

GOBSCH, G ;

HABERLANDT, H ;

WECKNER, HJ ;

REINHOLD, J .

PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1978, 90 (01) :309-317

[4] PARAMAGNETIC RESONANCE IN NEUTRON-IRRADIATED DIAMOND AND SMOKY QUARTZ [J].

GRIFFITHS, JHE ;

OWEN, J ;

WARD, IM .

NATURE, 1954, 173 (4401) :439-440

[5]

HABERLANDT H, UNPUBLISHED

[6] ANNEALING OF SURFACE-STATES IN POLYCRYSTALLINE-SILICON-GATE CAPACITORS [J].

HICKMOTT, TW .

JOURNAL OF APPLIED PHYSICS, 1977, 48 (02) :723-733

[7] CHEMICAL BOND AND RELATED PROPERTIES OF SIO2 .2. STRUCTURAL TRENDS [J].

HUBNER, K .

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1977, 40 (02) :487-495

[8]

Lehmann G, 1973, ANGEW CHEM, V85, P281, DOI DOI 10.1002/ANGE.19730850703

[9]

MEYER C, 1979, THESIS TH ILMENAU

[10] STUDY OF SILICON-SILICON DIOXIDE STRUCTURE BY ELECTRON SPIN RESONANCE .1. [J].

NISHI, Y .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1971, 10 (01) :52-+

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