REACTIONS AT THE AL/SIO2/SIC LAYERED INTERFACE

Electron spectroscopy and thermodynamic modelling have been used to examine reactions at the Al/SiO2/SiC layered interfaces at 800 °C. The reactions have been examined as a function of oxide thickness. Three regimes have been isolated: (i) where there is no oxide present aluminium and SiC react to produce Al4C3 and free silicon; (ii) where there is a thin oxide present the initial products are aluminosilicates and amorphous alumina; however, once the SiO2 is consumed, Al4C3 emerges as a product; (iii) where a thick oxide is present only aluminosilicate and alumina are formed. © 1990 Chapman and Hall Ltd.