共 11 条
- [1] Hata T., 1979, JPN J APPL PHYS, V18, P219, DOI [10.7567/JJAPS.18S1.219, DOI 10.7567/JJAPS.18S1.219]
- [2] HICKERNELL FS, 1973, J APPL PHYS, V44, P1061, DOI 10.1063/1.1662307
- [4] HIROHATA Y, 1976, OYO BUTURI, V48, P402
- [6] MINAKATA M, 1973, IECE JPN JT M PROF G, P25
- [7] DIELECTRIC PROPERTIES OF REACTIVELY SPUTTERED FILMS OF ALUMINUM NITRIDE [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1969, 6 (01): : 194 - +
- [8] RF-SPUTTERED ALUMINUM NITRIDE FILMS ON SAPPHIRE [J]. APPLIED PHYSICS LETTERS, 1974, 24 (04) : 155 - 156
- [9] EPITAXIALLY GROWN AIN AND ITS OPTICAL BAND GAP [J]. JOURNAL OF APPLIED PHYSICS, 1973, 44 (01) : 292 - 296
- [10] YOSHIDA S, 1975, APPL PHYS LETT, V26, P462