A 34-MU-M2 DRAM CELL FABRICATED WITH A 1-MU-M SINGLE-LEVEL POLYCIDE FET TECHNOLOGY

被引：8

作者：

CHAO, HH

DENNARD, RH

TSAI, MY

WORDEMAN, MR

CRAMER, A

机构：

来源：

关键词：

D O I：

10.1109/JSSC.1981.1051629

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：499 / 505

页数：7

共 11 条

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[8] ENHANCED CAPACITOR FOR ONE-TRANSISTOR MEMORY CELL
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[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1976, 23 (10) : 1187 - 1189
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