A 34-MU-M2 DRAM CELL FABRICATED WITH A 1-MU-M SINGLE-LEVEL POLYCIDE FET TECHNOLOGY

被引:8
作者
CHAO, HH
DENNARD, RH
TSAI, MY
WORDEMAN, MR
CRAMER, A
机构
关键词
D O I
10.1109/JSSC.1981.1051629
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
收藏
页码:499 / 505
页数:7
相关论文
共 11 条
  • [1] SURVEY OF HIGH-DENSITY DYNAMIC RAM CELL CONCEPTS
    CHATTERJEE, PK
    TAYLOR, GW
    EASLEY, RL
    FU, HS
    TASCH, AF
    [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1979, 26 (06) : 827 - 838
  • [2] 1 MU-M MOSFET VLSI TECHNOLOGY .7. METAL SILICIDE INTERCONNECTION TECHNOLOGY - FUTURE PERSPECTIVE
    CROWDER, BL
    ZIRINSKY, S
    [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1979, 26 (04) : 369 - 371
  • [3] DESIGN OF ION-IMPLANTED MOSFETS WITH VERY SMALL PHYSICAL DIMENSIONS
    DENNARD, RH
    GAENSSLEN, FH
    YU, HN
    RIDEOUT, VL
    BASSOUS, E
    LEBLANC, AR
    [J]. IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1974, SC 9 (05) : 256 - 268
  • [4] Ephrath L. M., 1980, International Electron Devices Meeting. Technical Digest, P402
  • [5] 1 MU-M MOSFET VLSI TECHNOLOGY .6. ELECTRON-BEAM LITHOGRAPHY
    GROBMAN, WD
    LUHN, HE
    DONOHUE, TP
    SPETH, AJ
    WILSON, A
    HATZAKIS, M
    CHANG, THP
    [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1979, 26 (04) : 360 - 368
  • [6] KRUGGEL R, 1972, IBM TECH DISCLOSURE, V14, P2714
  • [7] Schroeder P., 1977, ISSCC DIG TECH PAPER, P12
  • [8] ENHANCED CAPACITOR FOR ONE-TRANSISTOR MEMORY CELL
    SODINI, CG
    KAMINS, TI
    [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1976, 23 (10) : 1187 - 1189
  • [9] HI-C RAM CELL CONCEPT
    TASCH, AF
    CHATTERJEE, PK
    FU, HS
    HOLLOWAY, TC
    [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1978, 25 (01) : 33 - 41
  • [10] TSAI MY, 1981, 4TH P INT S SIL MAT, P573