TEMPERATURE LIMITATIONS FOR IR EXTRINSIC AND INTRINSIC PHOTODETECTORS

被引：16

作者：

SCLAR, N

机构：

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1980年 / 27卷 / 01期

关键词：

D O I：

10.1109/T-ED.1980.19828

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：109 / 118

页数：10

共 20 条

[1]

[Anonymous], COMMUNICATION

[2]

BLAKEMORE J, 1962, SEMICONDUCTOR STATIS, pCH2

[3] SENSITIVITY LIMITS FOR EXTRINSIC AND INTRINSIC INFRARED DETECTORS [J].

BLOUKE, MM ;

BURGETT, CB ;

WILLIAMS, RL .

INFRARED PHYSICS, 1973, 13 (01) :61-71

[4]

Bube R.H., 1960, PHOTOCONDUCTIVITY SO

[5] THERMAL LIMITATIONS IN PBSNTE DETECTORS [J].

DEVAUX, LH ;

KIMURA, H ;

SHEETS, MJ ;

RENDA, FJ ;

BALON, JR ;

CHIA, PS ;

LOCKWOOD, AH .

INFRARED PHYSICS, 1975, 15 (04) :271-277

[6] COUNTERDOPED EXTRINSIC SILICON INFRARED DETECTORS [J].

ELLIOTT, CT ;

MIGLIORATO, P ;

VERE, AW .

INFRARED PHYSICS, 1978, 18 (02) :65-71

[7]

GEBALLE TH, 1959, SEMICONDUCTORS

[8] INFRARED PROPERTIES OF GOLD IN GERMANIUM [J].

JOHNSON, L ;

LEVINSTEIN, H .

PHYSICAL REVIEW, 1960, 117 (05) :1191-1203

[9] RECOMBINATION MECHANISMS IN 8-14-MU HGCDTE [J].

KINCH, MA ;

BRAU, MJ ;

SIMMONS, A .

JOURNAL OF APPLIED PHYSICS, 1973, 44 (04) :1649-1663

[10] 0.1 EV HGCDTE PHOTOCONDUCTIVE DETECTOR PERFORMANCE [J].

KINCH, MA ;

BORRELLO, SR ;

SIMMONS, A .

INFRARED PHYSICS, 1977, 17 (02) :127-135

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