COUNTERDOPED EXTRINSIC SILICON INFRARED DETECTORS

被引：10

作者：

ELLIOTT, CT

MIGLIORATO, P

VERE, AW

机构：

来源：

INFRARED PHYSICS | 1978年 / 18卷 / 02期

关键词：

D O I：

10.1016/0020-0891(78)90014-3

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

引用

页码：65 / 71

页数：7

共 18 条

[1] IMAGING DEVICES USING CHARGE-COUPLED CONCEPT [J].

BARBE, DF .

PROCEEDINGS OF THE IEEE, 1975, 63 (01) :38-67

[2]

BURNSTEIN E, 1956, J PHYS CHEM SOLIDS, V1, P65

[3]

ELLIOTT CT, 1976, 3RD P INT C APPL CHA

[4] CHARACTERISTICS OF INFRARED PHOTODETECTORS PRODUCED BY RADIATION DOPING [J].

GROSS, C ;

MATTAUCH, RJ ;

VIOLA, TJ .

JOURNAL OF APPLIED PHYSICS, 1973, 44 (02) :735-739

[5]

Kruse PW., 1962, ELEMENTS INFRARED TE

[6] ON THE PHOTOIONIZATION OF DEEP IMPURITY CENTERS IN SEMICONDUCTORS [J].

Lucovsky, G. .

SOLID STATE COMMUNICATIONS, 1965, 3 (09) :299-302

[7]

MANTENA NR, 1969, P INT C PHOTOCONDUCT, P53

[8] SULFUR-DOPED SILICON BACKGROUND-LIMITED INFRARED PHOTODETECTORS NEAR 77 K [J].

MIGLIORATO, P ;

VERE, AW ;

ELLIOTT, CT .

APPLIED PHYSICS, 1976, 11 (03) :295-297

[9]

MIGLIORATO P, UNPUBLISHED

[10]

MIGLIORATO R, UNPUBLISHED

← 1 2 →