GROWTH AND OPTICAL-PROPERTIES OF NOVEL WIDE-BAND-GAP STRAINED-LAYER SINGLE QUANTUM-WELLS - ZN1-YCDYSE/ZNSXSE1-X

被引：22

作者：

WU, YH

KAWAKAMI, Y

FUJITA, S

机构：

[1] Department of Electrical Engineering, Kyoto University, Kyoto

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1991年 / 30卷 / 4A期

关键词：

ZNCDSE/ZNSSE SQW; GAAS; (NH4)2SX-PRETREATMENT; RHEED OSCILLATIONS; LAYER-BY-LAYER GROWTH;

D O I：

10.1143/JJAP.30.L555

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report the growth and optical properties of a new strained-layer wide-band-gap single-quantum well (SQW): Zn1-yCd(y)Se/ZnS(x)Se1-x. A SQW structure with four ZnCdSe wells of 1, 4, 8 and 12 monolayers (ML5) was grown on a GaAs substrate by metalorganic molecular beam epitaxy (MOMBE). The corresponding full widths at half-maximum (FWHMs) of 4.2 K photoluminescence peaks are 15.8, 18.2, 18.4 and 15.0 meV, respectively. These values are considerably small in spite of the high strain in well layers (about 2%), which are attributed to the well-defined structures of the SQW as confirmed by reflection high-energy electron diffraction (RHEED) in situ observation.

引用

页码：L555 / L557

页数：3

共 17 条

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