HIGH-DOSE URANIUM ION-IMPLANTATION INTO SILICON

被引:5
作者
BROWN, IG
GALVIN, JE
YU, KM
机构
关键词
D O I
10.1016/0168-583X(88)90455-7
中图分类号
TH7 [仪器、仪表];
学科分类号
0804 ; 080401 ; 081102 ;
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页码:558 / 562
页数:5
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