HIGH-TEMPERATURE STABILITY OF SI/SIO2 INTERFACES AND THE INFLUENCE OF SIO FLUX ON THERMOMIGRATION OF IMPURITIES IN SIO2

被引:15
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CELLER, GK
TRIMBLE, LE
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10.1063/1.100527
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O59 [应用物理学];
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页码:2492 / 2494
页数:3
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[1]  
BALK P, 1986, DIELECTRIC LAYERS SE, P263
[2]   DIFFUSION OF SILICON IN AMORPHOUS SILICA [J].
BREBEC, G ;
SEGUIN, R ;
SELLA, C ;
BEVENOT, J ;
MARTIN, JC .
ACTA METALLURGICA, 1980, 28 (03) :327-333
[3]  
CELLER CK, 1987, APPL PHYS LETT, V50, P664
[4]  
CELLER GK, 1987, SOLID STATE TECHNOL, V30, P93
[5]   PRECIPITATION OF GROUP-V ELEMENTS AND GE IN SIO2 AND THEIR DRIFT IN A TEMPERATURE-GRADIENT [J].
CELLER, GK ;
TRIMBLE, LE ;
SHENG, TT ;
KOSINSKI, SG ;
WEST, KW .
APPLIED PHYSICS LETTERS, 1988, 53 (13) :1178-1180
[6]  
CELLER GK, 1987, USLI SCI TECHNOLOGY, P696
[7]  
CELLER GK, 1988, MATER RES SOC S P, V105, P47
[8]  
FARROW RFC, 1986, SEMICONDUCTOR BASED, P285
[9]   SCANNING TUNNELING MICROSCOPY OF SI(001) [J].
HAMERS, RJ ;
TROMP, RM ;
DEMUTH, JE .
PHYSICAL REVIEW B, 1986, 34 (08) :5343-5357
[10]   HIGH-TEMPERATURE VAPORIZATION BEHAVIOR OF OXIDES .2. OXIDES OF BE, MG, CA, SR, BA, B, AL, GA, IN, TL, SI, GE, SN, PB, ZN, CD, AND HG [J].
LAMOREAUX, RH ;
HILDENBRAND, DL ;
BREWER, L .
JOURNAL OF PHYSICAL AND CHEMICAL REFERENCE DATA, 1987, 16 (03) :419-443