PRECIPITATION OF GROUP-V ELEMENTS AND GE IN SIO2 AND THEIR DRIFT IN A TEMPERATURE-GRADIENT

被引：15

作者：

CELLER, GK

TRIMBLE, LE

SHENG, TT

KOSINSKI, SG

WEST, KW

机构：

来源：

APPLIED PHYSICS LETTERS | 1988年 / 53卷 / 13期

关键词：

D O I：

10.1063/1.100664

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1178 / 1180

页数：3

共 14 条

[1]

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CELLER, GK ;

TRIMBLE, LE .

APPLIED PHYSICS LETTERS, 1988, 52 (17) :1425-1427

[3]

CELLER GK, 1987, MATER RES SOC S P, V92, P53

[4]

CELLER GK, 1987, SOLID STATE TECHNOL, V30, P69

[5]

CELLER GK, 1988, MATER RES SOC S P, V105

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[8] HIGH-TEMPERATURE VAPORIZATION BEHAVIOR OF OXIDES .2. OXIDES OF BE, MG, CA, SR, BA, B, AL, GA, IN, TL, SI, GE, SN, PB, ZN, CD, AND HG [J].

LAMOREAUX, RH ;

HILDENBRAND, DL ;

BREWER, L .

JOURNAL OF PHYSICAL AND CHEMICAL REFERENCE DATA, 1987, 16 (03) :419-443

[9]

LEE ST, 1988, MATER RES SOC S P, V105

[10] A SPREADING RESISTANCE TECHNIQUE FOR RESISTIVITY MEASUREMENTS ON SILICON [J].

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