RELEASE OF ARSENIC FROM SIO2 BY A TEMPERATURE-GRADIENT AND FORMATION OF BURIED N+ CONDUCTIVE LAYERS IN SI-ON-SIO2 STRUCTURES

被引：1

作者：

CELLER, GK

TRIMBLE, LE

机构：

来源：

APPLIED PHYSICS LETTERS | 1988年 / 52卷 / 17期

关键词：

D O I：

10.1063/1.99689

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1425 / 1427

页数：3

共 14 条

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[3]

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[6]

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[7]

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[10] POWER DEVICES ARE IN THE CHIPS [J].

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