SEGREGATION AND DRIFT OF ARSENIC IN SIO2 UNDER THE INFLUENCE OF A TEMPERATURE-GRADIENT

被引：11

作者：

CELLER, GK

TRIMBLE, LE

WEST, KW

PFEIFFER, L

SHENG, TT

机构：

来源：

APPLIED PHYSICS LETTERS | 1987年 / 50卷 / 11期

关键词：

D O I：

10.1063/1.98114

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：664 / 666

页数：3

共 9 条

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[8] ANOMALOUS ARSENIC DIFFUSION IN SILICON DIOXIDE [J].

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[9] ARSENIC DIFFUSION IN SILICON USING LOW AS2O3-CONTENT BINARY ARSENOSILICATE GLASS SOURCES [J].

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