DIFFUSION OF ION-IMPLANTED AS IN SIO2

被引：28

作者：

VANOMMEN, AH

机构：

[1] Philips Research Lab, Eindhoven, Neth, Philips Research Lab, Eindhoven, Neth

来源：

JOURNAL OF APPLIED PHYSICS | 1984年 / 56卷 / 10期

关键词：

D O I：

10.1063/1.333799

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：2708 / 2715

页数：8

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