ANOMALOUS ARSENIC DIFFUSION IN SILICON DIOXIDE

被引：23

作者：

WADA, Y ^{[1
]}

ANTONIADIS, DA ^{[1
]}

机构：

[1] MIT,DEPT ELECT ENGN & COMP SCI,CAMBRIDGE,MA 02139

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1981年 / 128卷 / 06期

关键词：

D O I：

10.1149/1.2127627

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：1317 / 1320

页数：4

共 16 条

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[4]

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[5]

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[7] THE OXIDATION RATE DEPENDENCE OF OXIDATION-ENHANCED DIFFUSION OF BORON AND PHOSPHORUS IN SILICON [J].

LIN, AM ;

ANTONIADIS, DA ;

DUTTON, RW .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1981, 128 (05) :1131-1137

[8] DEPTH PROFILING OF SODIUM IN SIO2-FILMS BY SECONDARY ION MASS-SPECTROMETRY [J].

MAGEE, CW ;

HARRINGTON, WL .

APPLIED PHYSICS LETTERS, 1978, 33 (02) :193-196

[9] ARSENIC ISOCONCENTRATION DIFFUSION STUDIES IN SILICON [J].

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[10]

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