ARSENIC DIFFUSION IN SILICON USING LOW AS2O3-CONTENT BINARY ARSENOSILICATE GLASS SOURCES

This activation energy is found to be 4. 1 plus or minus 0. 1 eV, in good agreement with previous work. Concentration dependence of the diffusion coefficient of arsenic in silicon has been evaluated from the diffusion profiles using the Boltzmann-Matano analysis. In addition, the masking ability of SiO//2 toward arsenic diffusion and some diffusion parameters of arsenic in SiO//2 have been estimated.