DIELECTRICALLY ISOLATED THICK SI FILMS BY LATERAL EPITAXY FROM THE MELT

被引：14

作者：

CELLER, GK ^{[1
]}

ROBINSON, M ^{[1
]}

TRIMBLE, LE ^{[1
]}

LISCHNER, DJ ^{[1
]}

机构：

[1] AT&T BELL LABS,ALLENTOWN,PA 18103

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1985年 / 132卷 / 01期

关键词：

D O I：

10.1149/1.2113766

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：211 / 219

页数：9

共 21 条

[1]

Atwater H. A., 1984, Materials Letters, V2, P269, DOI 10.1016/0167-577X(84)90128-9

[2] DIELECTRIC ISOLATION - COMPREHENSIVE, CURRENT AND FUTURE [J].

BEAN, KE ;

RUNYAN, WR .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1977, 124 (01) :C5-C12

[3] AN ETCH PIT TECHNIQUE FOR ANALYZING CRYSTALLOGRAPHIC ORIENTATION IN SI FILMS [J].

BEZJIAN, KA ;

SMITH, HI ;

CARTER, JM ;

GEIS, MW .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1982, 129 (08) :1848-1850

[4] SEEDED RECRYSTALLIZATION OF THICK POLYSILICON FILMS ON OXIDIZED 3-IN WAFERS [J].

CELLER, GK ;

ROBINSON, M ;

LISCHNER, DJ .

APPLIED PHYSICS LETTERS, 1983, 42 (01) :99-101

[5] SPATIAL MELT INSTABILITIES IN RADIATIVELY MELTED CRYSTALLINE SILICON [J].

CELLER, GK ;

ROBINSON, M ;

TRIMBLE, LE ;

LISCHNER, DJ .

APPLIED PHYSICS LETTERS, 1983, 43 (09) :868-870

[6] LASER CRYSTALLIZATION OF THIN SI FILMS ON AMORPHOUS INSULATING SUBSTRATES [J].

CELLER, GK .

JOURNAL OF CRYSTAL GROWTH, 1983, 63 (03) :429-444

[7]

CELLER GK, 1983, MATERIALS RES SOC S, V13, P575

[8]

CELLER GK, 1984, MATER RES SOC S P, V23, P409

[9]

CULLEN GW, 1983, J CRYST GROWTH, V63, P3

[10] GRAPHITE-STRIP-HEATER ZONE-MELTING RECRYSTALLIZATION OF SI FILMS [J].

FAN, JCC ;

TSAUR, BY ;

GEIS, MW .

JOURNAL OF CRYSTAL GROWTH, 1983, 63 (03) :453-483

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