SEEDED RECRYSTALLIZATION OF THICK POLYSILICON FILMS ON OXIDIZED 3-IN WAFERS

被引：25

作者：

CELLER, GK ^{[1
]}

ROBINSON, M ^{[1
]}

LISCHNER, DJ ^{[1
]}

机构：

[1] BELL TEL LABS INC,ALLENTOWN,PA 18103

来源：

APPLIED PHYSICS LETTERS | 1983年 / 42卷 / 01期

关键词：

D O I：

10.1063/1.93741

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：99 / 101

页数：3

共 13 条

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[2] ANNULAR GRAIN STRUCTURES IN PULSED LASER RECRYSTALLIZED SI ON AMORPHOUS INSULATORS [J].

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SHENG, TT .

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[3] SEEDED OSCILLATORY GROWTH OF SI OVER SIO2 BY CW LASER IRRADIATION [J].

CELLER, GK ;

TRIMBLE, LE ;

NG, KK ;

LEAMY, HJ ;

BAUMGART, H .

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[5]

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[6] LATERAL EPITAXY BY SEEDED SOLIDIFICATION FOR GROWTH OF SINGLE-CRYSTAL SI FILMS ON INSULATORS [J].

FAN, JCC ;

GEIS, MW ;

TSAUR, BY .

APPLIED PHYSICS LETTERS, 1981, 38 (05) :365-367

[7]

GAT A, 1978, APPL PHYS LETT, V33, P8

[8]

Lam H. W., 1982, Laser and Electron Beam Interactions with Solids. Proceedings of the Materials Research Society Annual Meeting, P471

[9] SINGLE-CRYSTAL SILICON-ON-OXIDE BY A SCANNING CW LASER-INDUCED LATERAL SEEDING PROCESS [J].

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[10]

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