EPITAXIAL-FILMS OF WS2 BY METAL-ORGANIC VAN-DER-WAALS EPITAXY (MO-VDWE)

被引:39
作者
TIEFENBACHER, S [1 ]
SEHNERT, H [1 ]
PETTENKOFER, C [1 ]
JAEGERMANN, W [1 ]
机构
[1] HAHN MEITNER INST BERLIN GMBH, GRENZFLACHEN ABT, D-14109 BERLIN, GERMANY
关键词
D O I
10.1016/0039-6028(94)90331-X
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Epitaxial films of WS, have been grown on graphite (HOPG) by metal organic molecular beam epitaxy (MO-MBE). As precursors W(CO), and S have been used. The growth temperatures are rather high and the deposition efficiency is very low which is related to the chemical inertness of the involved van der Waals planes.
引用
收藏
页码:L1161 / L1164
页数:4
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