MINORITY-CARRIER DIFFUSION LENGTH OF P-GAAS DETERMINED BY TIME OF FLIGHT

被引:12
作者
KEYES, BM [1 ]
DUNLAVY, DJ [1 ]
AHRENKIEL, RK [1 ]
ASHER, SE [1 ]
PARTAIN, LD [1 ]
LIU, DD [1 ]
KURYLA, MS [1 ]
机构
[1] VARIAN ASSOCIATES INC,RES CTR,PALO ALTO,CA 94303
来源
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS | 1990年 / 8卷 / 03期
关键词
D O I
10.1116/1.576796
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
A diffusion time-of-flight (TOF) technique is described and analysis is performed on four different p-GaAs heterostructure devices. These p/n junction devices were grown by metal organic chemical vapor deposition (MOCVD). Both Zn and Mg were used as dopants with concentrations ranging from 1X1018 to 1 × 1019 cm −3. We have been able to determine the diffusivity (D) along with upper and lower estimates of the diffusion length (LD). The results imply the presence of a mechanism such as photon recycling. © 1990, American Vacuum Society. All rights reserved.
引用
收藏
页码:2004 / 2008
页数:5
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