CONTRAST ENHANCEMENT OF SAL RESIST BY REDUCING RESIDUAL SOLVENT AT PREBAKE

被引：6

作者：

ISHII, T

MATSUDA, T

机构：

[1] NIT LSI Laboratories, 243-01

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 1991年 / 30卷 / 7A期

关键词：

ELECTRON-BEAM LITHOGRAPHY; CHEMICALLY AMPLIFIED RESIST; PREBAKE; POST EXPOSURE BAKE (PEB);

D O I：

10.1143/JJAP.30.L1215

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

An examination of prebake effects of a chemically amplified resist, SAL601-ER7, reveals that solvent retention in the film after prebake has a great effect on pattern contrast. By reducing residual solvent through a high temperature prebake (105-degrees-C), 0.8-mu-m lines and spaces can be obtained in a thick single layer resist of 1.8-mu-m and 0.1-mu-m feature patterns with an aspect ratio of 6 can be resolved.

引用

页码：L1215 / L1217

页数：3

共 6 条

[1] BATCHELDER T, 1983, SOLID STATE TECHNOL, V26, P211
[2] DEGRANDPRE M, 1988, SPIE, V923, P158
[3] THERMAL EFFECTS ON PHOTORESIST AZ1350J
DILL, FH
SHAW, JM
[J]. IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1977, 21 (03) : 210 - 218
[4] CHARACTERIZATION OF A HIGH-RESOLUTION NOVOLAK BASED NEGATIVE ELECTRON-BEAM RESIST WITH 4-MU-C/CM2 SENSITIVITY
LIU, HY
DEGRANDPRE, MP
FEELY, WE
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1988, 6 (01): : 379 - 383
[5] ELECTRON-BEAM DIRECT WRITING TECHNOLOGY FOR 64-MB DRAM LSIS
MURAI, F
NAKAYAMA, Y
SAKAMA, I
KAGA, T
NAKAGOME, Y
KAWAMOTO, Y
OKAZAKI, S
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1990, 29 (11): : 2590 - 2595
[6] Newman J., 1975, PROG ORG COAT, V3, P221, DOI [10.1016/0300-9440(75)80008-7, DOI 10.1016/0300-9440(75)80008-7]

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