ATOMIC-SCALE VIEW OF ALGAAS/GAAS MULTILAYERS WITH CROSS-SECTIONAL SCANNING-TUNNELING-MICROSCOPY

被引：4

作者：

JOHNSON, MB

MAIER, U

MEIER, HP

SALEMINK, H

机构：

[1] Zurich Research Laboratory, IBM Research Division

来源：

JOURNAL OF CRYSTAL GROWTH | 1993年 / 127卷 / 1-4期

关键词：

D O I：

10.1016/0022-0248(93)90795-X

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Atomically-resolved cross-sectional topographic images of AlGaAs/GaAs multilayers, which includes a sequence of 1, 2, 5, and 10 nm AlGaAs and GaAs layers, have been made using a scanning tunneling microscope. All the layers appear distinct and the dimensions of the as-grown layers can be accurately measured. Furthermore, alloy fluctuations and interface roughness over 2 nm length scales and ordering along certain directions are clearly observed.

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页码：1077 / 1082

页数：6

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