LOCAL ELECTRIC-FIELD EFFECT IN REACTIVE ION ETCHING

被引：5

作者：

ARDEHALI, M

MATSUMOTO, H

机构：

[1] Microelectronics Research Laboratories, NEC Corporation, Sagamihara, Kanagawa, 229

[2] System ASIC Division, NEC Corp., Nakahara-ku, Kawasaki, 211, 1753, Shimonumabe

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1993年 / 32卷 / 6B期

关键词：

REACTIVE ION ETCHING; LOCAL ELECTRIC FIELD; TRENCH; ION TRAJECTORIES; SHEATH THICKNESS; FEATURE SIZE;

D O I：

10.1143/JJAP.32.3029

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We present unambiguous evidence that under reactive ion etching conditions, i.e., P less-than-or-equal-to 75 mTorr, the perturbation of the local electric field by the geometric shape of the trench has very little influence on ion trajectories and hence on the etching rate. This local electric field effect is negligible even for trenches with depths as large as 50 mum, and even for incident ions with energies as small as 20 eV. These results are in sharp disagreement with the previous models in the literature.

引用

页码：3029 / 3034

页数：6