RADIO-FREQUENCY BIASED MICROWAVE PLASMA-ETCHING TECHNIQUE - A METHOD TO INCREASE SIO2 ETCH RATE

[1] PLASMA-ETCHING - DISCUSSION OF MECHANISMS [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1979, 16 (02): : 391 - 403

[2] POSITIVE-ION BOMBARDMENT OF SUBSTRATES IN RF DIODE GLOW-DISCHARGE SPUTTERING [J]. JOURNAL OF APPLIED PHYSICS, 1972, 43 (12) : 4965 - 4971

[3] RADIOFREQUENCY MODULATION IN THE THONEMAN ION SOURCE [J]. NUCLEAR INSTRUMENTS & METHODS, 1958, 3 (05): : 303 - 306

[4] NOTES ON EFFECT OF NOISE ON LANGMUIR PROBE CHARACTERISTICS [J]. PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON, 1962, 79 (509): : 535 - &

[5] HARPER JME, 1981, J ELECTROCHEM SOC, V128, P1077, DOI 10.1149/1.2127554

[6] CONTROL OF RELATIVE ETCH RATES OF SIO2 AND SI IN PLASMA ETCHING [J]. SOLID-STATE ELECTRONICS, 1975, 18 (12) : 1146 - 1147

[7] RF SPUTTERING VOLTAGE DIVISION BETWEEN 2 ELECTRODES [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1983, 1 (01): : 60 - 68

[8] ELECTRICAL-PROPERTIES OF RF SPUTTERING SYSTEMS [J]. IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1979, 23 (01) : 3 - 15

[9] Lochte-Holtgreven, 1968, PLASMA DIAGNOSTICS, P668

[10] REACTIVE ION-BEAM ETCHING WITH CF4 - CHARACTERIZATION OF A KAUFMAN ION-SOURCE AND DETAILS OF SIO2 ETCHING [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1982, 129 (03) : 585 - 591

[1] PLASMA-ETCHING - DISCUSSION OF MECHANISMS [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1979, 16 (02): : 391 - 403

[2] POSITIVE-ION BOMBARDMENT OF SUBSTRATES IN RF DIODE GLOW-DISCHARGE SPUTTERING [J]. JOURNAL OF APPLIED PHYSICS, 1972, 43 (12) : 4965 - 4971

[3] RADIOFREQUENCY MODULATION IN THE THONEMAN ION SOURCE [J]. NUCLEAR INSTRUMENTS & METHODS, 1958, 3 (05): : 303 - 306

[4] NOTES ON EFFECT OF NOISE ON LANGMUIR PROBE CHARACTERISTICS [J]. PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON, 1962, 79 (509): : 535 - &

[5] HARPER JME, 1981, J ELECTROCHEM SOC, V128, P1077, DOI 10.1149/1.2127554

[6] CONTROL OF RELATIVE ETCH RATES OF SIO2 AND SI IN PLASMA ETCHING [J]. SOLID-STATE ELECTRONICS, 1975, 18 (12) : 1146 - 1147

[7] RF SPUTTERING VOLTAGE DIVISION BETWEEN 2 ELECTRODES [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1983, 1 (01): : 60 - 68

[8] ELECTRICAL-PROPERTIES OF RF SPUTTERING SYSTEMS [J]. IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1979, 23 (01) : 3 - 15

[9] Lochte-Holtgreven, 1968, PLASMA DIAGNOSTICS, P668

[10] REACTIVE ION-BEAM ETCHING WITH CF4 - CHARACTERIZATION OF A KAUFMAN ION-SOURCE AND DETAILS OF SIO2 ETCHING [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1982, 129 (03) : 585 - 591