Intrinsic defects in ZnSe, ZnTe, and CdS doped with Li

被引：3

作者：

Wolf, H

Jost, A

Lermen, R

Filz, T

Ostheimer, V

Wichert, T

机构：

来源：

ICDS-18 - PROCEEDINGS OF THE 18TH INTERNATIONAL CONFERENCE ON DEFECTS IN SEMICONDUCTORS, PTS 1-4 | 1995年 / 196-卷

关键词：

II-VI compounds; In; Li; cation vacancy; PAC;

D O I：

10.4028/www.scientific.net/MSF.196-201.321

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Doping of the II-VI semiconductors CdS, ZnSe, and ZnTe with Li atoms was investigated by PAC spectroscopy. During isothermal Li diffusion experiments the formation of cation vacancies was observed, which was detected by the formation of A-centres involving the probe In-111. The dependence of the concentration of A-centers on temperature and time, observed in ZnTe, is described by a thermodynamical model, from which the diffusion coefficient of the cation vacancy and the solubility of Li in ZnTe is deduced.

引用

页码：321 / 325

页数：5

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