CHARACTERIZATION OF ZNSE AND OTHER II-VI SEMICONDUCTORS BY RADIOACTIVE DOPANTS

In the II-VI compounds ZnS, CdS, ZnSe, CdSe, ZnTe and CdTe doped with In, the formation of In(M)-V(M) pairs is shown to occur using the radioactive dopant In-111 along with the perturbed gammagamma angular correlation technique. For CdS and ZnSe, the migration energy of the metallic vacancy defect V(M) and its binding energy to the donor In is determined. The creation of V(M) defects under different experimental conditions is investigated, such as stoichiometry, temperature, electron irradiation and doping with Li atoms.