RECOMBINATION PROCESSES IN 3 TO 5-MU-M HGCDTE

[1] ANDRUKHIV MG, 1979, SOV PHYS SEMICOND+, V13, P210

[2] ARAPOV YG, 1979, SOV PHYS SEMICOND+, V13, P409

[3] RECOMBINATION IN CADMIUM MERCURY TELLURIDE PHOTODETECTORS [J]. SOLID-STATE ELECTRONICS, 1978, 21 (11-1) : 1475 - 1480

[4] RESONANT ACCEPTOR LEVEL IN ZERO-GAP SEMICONDUCTORS - SINGLE AND MULTIPLE-SCATTERING EFFECTS [J]. PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1977, 80 (02): : 641 - 650

[5] AUGER EFFECT IN SEMICONDUCTORS [J]. PROCEEDINGS OF THE ROYAL SOCIETY OF LONDON SERIES A-MATHEMATICAL AND PHYSICAL SCIENCES, 1959, 249 (1256): : 16 - 29

[6] BEATTIE AR, 1960, P ROY SOC A, V251, P486

[7] BICHARD R, 1977, 3 P INT C PHYS NARR, P245

[8] BLAKEMORE JS, 1962, SEMICONDUCTOR STATIS, P196

[9] CARRIER FREEZE-OUT AND ACCEPTOR ENERGIES IN P-TYPE HG1-XCDXTE [J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1972, 33 (08) : 1527 - &

[10] AUGER-EFFECT IN HG1-XCDXTE [J]. SOLID-STATE ELECTRONICS, 1978, 21 (11-1) : 1467 - 1470

[1] ANDRUKHIV MG, 1979, SOV PHYS SEMICOND+, V13, P210

[2] ARAPOV YG, 1979, SOV PHYS SEMICOND+, V13, P409

[3] RECOMBINATION IN CADMIUM MERCURY TELLURIDE PHOTODETECTORS [J]. SOLID-STATE ELECTRONICS, 1978, 21 (11-1) : 1475 - 1480

[4] RESONANT ACCEPTOR LEVEL IN ZERO-GAP SEMICONDUCTORS - SINGLE AND MULTIPLE-SCATTERING EFFECTS [J]. PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1977, 80 (02): : 641 - 650

[5] AUGER EFFECT IN SEMICONDUCTORS [J]. PROCEEDINGS OF THE ROYAL SOCIETY OF LONDON SERIES A-MATHEMATICAL AND PHYSICAL SCIENCES, 1959, 249 (1256): : 16 - 29

[6] BEATTIE AR, 1960, P ROY SOC A, V251, P486

[7] BICHARD R, 1977, 3 P INT C PHYS NARR, P245

[8] BLAKEMORE JS, 1962, SEMICONDUCTOR STATIS, P196

[9] CARRIER FREEZE-OUT AND ACCEPTOR ENERGIES IN P-TYPE HG1-XCDXTE [J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1972, 33 (08) : 1527 - &

[10] AUGER-EFFECT IN HG1-XCDXTE [J]. SOLID-STATE ELECTRONICS, 1978, 21 (11-1) : 1467 - 1470