PROCESSING OF ALL-NBN TUNNEL JUNCTION SERIES ARRAYS

被引：9

作者：

BLAUGHER, RD

PRZYBYSZ, JX

TALVACCHIO, J

BUTTYAN, J

机构：

来源：

IEEE TRANSACTIONS ON MAGNETICS | 1987年 / 23卷 / 02期

关键词：

D O I：

10.1109/TMAG.1987.1064979

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：673 / 675

页数：3

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[2] AN INTEGRATION OF ALL REFRACTORY JOSEPHSON LOGIC LSI CIRCUIT
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[3] SELECTIVE NIOBIUM ANODIZATION PROCESS FOR FABRICATING JOSEPHSON TUNNEL-JUNCTIONS
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[J]. APPLIED PHYSICS LETTERS, 1981, 39 (03) : 280 - 282
[4] ALL REFRACTORY JOSEPHSON TUNNEL-JUNCTIONS FABRICATED BY REACTIVE ION ETCHING
SHOJI, A
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AOYAGI, M
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[J]. IEEE TRANSACTIONS ON MAGNETICS, 1983, 19 (03) : 827 - 830
[5] NIOBIUM NITRIDE JOSEPHSON TUNNEL-JUNCTIONS WITH MAGNESIUM-OXIDE BARRIERS
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[J]. APPLIED PHYSICS LETTERS, 1985, 46 (11) : 1098 - 1100
[6] ARTIFICIAL OXIDE BARRIERS FOR NBN TUNNEL-JUNCTIONS
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[J]. JOURNAL OF APPLIED PHYSICS, 1985, 58 (12) : 4638 - 4642