AN INTEGRATION OF ALL REFRACTORY JOSEPHSON LOGIC LSI CIRCUIT

被引：33

作者：

KOSAKA, S

SHOJI, A

AOYAGI, M

SHINOKI, F

TAHARA, S

OHIGASHI, H

NAKAGAWA, H

TAKADA, S

HAYAKAWA, H

机构：

来源：

IEEE TRANSACTIONS ON MAGNETICS | 1985年 / 21卷 / 02期

关键词：

D O I：

10.1109/TMAG.1985.1063616

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：102 / 109

页数：8

共 10 条

[1] NIOBIUM OXIDE BARRIER TUNNEL JUNCTION [J].

BROOM, RF ;

RAIDER, SI ;

OOSENBRUG, A ;

DRAKE, RE ;

WALTER, W .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1980, 27 (10) :1998-2008

[2] REACTIVE ION ETCHING OF NIOBIUM [J].

FOXE, TT ;

HUNT, BD ;

ROGERS, C ;

KLEINSASSER, AW ;

BUHRMAN, RA .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1981, 19 (04) :1394-1397

[3] HIGH-QUALITY REFRACTORY JOSEPHSON TUNNEL-JUNCTIONS UTILIZING THIN ALUMINUM LAYERS [J].

GURVITCH, M ;

WASHINGTON, MA ;

HUGGINS, HA .

APPLIED PHYSICS LETTERS, 1983, 42 (05) :472-474

[4] ALL-REFRACTORY JOSEPHSON LOGIC-CIRCUITS [J].

JILLIE, D ;

SMITH, LN ;

KROGER, H ;

CURRIER, LW ;

PAYER, RL ;

POTTER, C ;

SHAW, DM .

IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1983, 18 (02) :173-180

[5]

KOSAKA S, 1983, APPL PHYS LETT, V43, P213, DOI 10.1063/1.94259

[6] SELECTIVE NIOBIUM ANODIZATION PROCESS FOR FABRICATING JOSEPHSON TUNNEL-JUNCTIONS [J].

KROGER, H ;

SMITH, LN ;

JILLIE, DW .

APPLIED PHYSICS LETTERS, 1981, 39 (03) :280-282

[7]

NAKAGAWA H, 1983, 15TH C SOL STAT DEV, P137

[8] REACTIVE ION ETCHING IN THE FABRICATION OF NIOBIUM TUNNEL-JUNCTIONS [J].

REIBLE, SA .

IEEE TRANSACTIONS ON MAGNETICS, 1981, 17 (01) :303-306

[9] ALL REFRACTORY JOSEPHSON TUNNEL-JUNCTIONS FABRICATED BY REACTIVE ION ETCHING [J].

SHOJI, A ;

KOSAKA, S ;

SHINOKI, F ;

AOYAGI, M ;

HAYAKAWA, H .

IEEE TRANSACTIONS ON MAGNETICS, 1983, 19 (03) :827-830

[10]

SUYAMA K, 1983, JPN J APPL PHYS S, V22, P341

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