IMPROVEMENT OF THIN-GATE OXIDE INTEGRITY USING PHOTO-ENHANCED LOW-TEMPERATURE NITRIDATION

被引：1

作者：

FANG, YK

HWANG, KC

CHEN, YW

CHIANG, CP

机构：

[1] VLSI Technology Laboratory, Research Institute of Electronics and Electrical Engineering, National Cheng Kung University, Tainan

来源：

SOLID-STATE ELECTRONICS | 1990年 / 33卷 / 08期

关键词：

Charge to Breakdown - Interface State Generation - MOS Capacitors - Photo-Enhanced Low-Temperature Nitridation - Polysilicon - Thin-Gate Oxide Integrity;

D O I：

10.1016/0038-1101(90)90217-3

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A photo-enhanced low-temperature nitridation process to improve the integrity of thin-gate oxide is described. With the aid of mercury UV light energy, the gate oxide can be nitrided thermally at 600°C. Measurements were made on a polycrystalline silicon (poly-Si)-gate MOS capacitor. Interface-state generation and charge-to-breakdown under high-field stress are significantly improved. The ability to resist r.f. (radio frequency) radiation damage in a plasma ambient is also improved. These results show that photo-enhanced low-temperature-nitrided thin-gate oxides are approaching high-temperature nitrided oxides in quality, and may be suitable as gate dielectrics in device applications. © 1990.

引用

页码：1039 / 1042

页数：4

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