MODELING OF AMBIENT-MENISCUS MELT INTERACTIONS ASSOCIATED WITH CARBON AND OXYGEN-TRANSPORT IN EFG OF SILICON RIBBON

被引：9

作者：

KALEJS, JP ^{[1
]}

CHIN, LY ^{[1
]}

机构：

[1] CLARKSON COLL TECHNOL,DEPT CHEM ENGN,POTSDAM,NY 13676

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1982年 / 129卷 / 06期

关键词：

D O I：

10.1149/1.2124150

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：1356 / 1361

页数：6

共 15 条

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[3]

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[6]

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[7] IMPURITY REDISTRIBUTION IN EFG [J].

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[8]

KALEJS JP, 1980, ELECTRONIC OPTICAL P, P242

[9]

KALEJS JP, 1981, UNPUB JUL ACCG 5 SAN

[10]

KALEJS JP, 1981, DOEJPL954355 Q PROGR

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