SOFT-X-RAY-EMISSION STUDIES OF BULK FE3SI, FESI, AND FESI2, AND IMPLANTED IRON SILICIDES

被引:33
作者
JIA, JJ
CALLCOTT, TA
OBRIEN, WL
DONG, QY
MUELLER, DR
EDERER, DL
TAN, Z
BUDNICK, JI
机构
[1] NATL INST STAND & TECHNOL,GAITHERSBURG,MD 20899
[2] UNIV CONNECTICUT,STORRS,CT 06269
来源
PHYSICAL REVIEW B | 1992年 / 46卷 / 15期
关键词
D O I
10.1103/PhysRevB.46.9446
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Bulk iron silicides and implanted iron silicides have been studied by soft-x-ray emission (SXE) spectroscopy. The Si L2,3 emission spectra of these materials are measured. For bulk silicides, these spectra provide a measure of s- and d-type partial density of states (PDOS) localized on the Si sites. We compare them with available band-structure calculations and also with photoemission measurements. For implanted systems, the Si L2,3 emission spectra provide useful information about the silicide formation process with the variation of implant doses.
引用
收藏
页码:9446 / 9451
页数:6
相关论文
共 21 条
  • [1] Aronsson B., 1965, BORIDES SILICIDES PH
  • [2] MECHANISM OF ELECTRICAL CONDUCTION IN BETA-FESI2
    BIRKHOLZ, U
    SCHELM, J
    [J]. PHYSICA STATUS SOLIDI, 1968, 27 (01): : 413 - &
  • [3] THE STRUCTURE AND PROPERTIES OF METAL-SEMICONDUCTOR INTERFACES
    Brillson, L. J.
    [J]. SURFACE SCIENCE REPORTS, 1982, 2 (02) : 123 - 326
  • [4] ELECTRONIC PROPERTIES OF SILICON-TRANSITION METAL INTERFACE COMPOUNDS
    Calandra, C.
    Bisi, O.
    Ottaviani, G.
    [J]. SURFACE SCIENCE REPORTS, 1985, 4 (5-6) : 271 - 364
  • [5] HIGH-EFFICIENCY SOFT-X-RAY EMISSION SPECTROMETER FOR USE WITH SYNCHROTRON RADIATION EXCITATION
    CALLCOTT, TA
    TSANG, KL
    ZHANG, CH
    EDERER, DL
    ARAKAWA, ET
    [J]. REVIEW OF SCIENTIFIC INSTRUMENTS, 1986, 57 (11) : 2680 - 2690
  • [6] AREA DETECTORS FOR X-RAY SPECTROSCOPY
    CALLCOTT, TA
    TSANG, KL
    ZHANG, CH
    EDERER, DL
    ARAKAWA, ET
    [J]. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, 1988, 266 (1-3) : 578 - 585
  • [7] HETEROEPITAXY OF METALLIC AND SEMICONDUCTING SILICIDES ON SILICON
    CHERIEF, N
    CINTI, R
    DECRESCENZI, M
    DERRIEN, J
    NGUYEN, TAT
    VEUILLEN, JY
    [J]. APPLIED SURFACE SCIENCE, 1989, 41-2 : 241 - 252
  • [8] ELECTRONIC-STRUCTURE OF BETA-FESI2
    CHRISTENSEN, NE
    [J]. PHYSICAL REVIEW B, 1990, 42 (11): : 7148 - 7153
  • [9] Dusausoy P Y., 1971, ACTA CRYSTALLOGR B, V27, P1209, DOI [10.1107/S0567740871003765, DOI 10.1107/S0567740871003765]
  • [10] BONDING STATE OF SILICON SEGREGATED TO ALPHA-IRON SURFACES AND ON IRON SILICIDE SURFACES STUDIED BY ELECTRON-SPECTROSCOPY
    EGERT, B
    PANZNER, G
    [J]. PHYSICAL REVIEW B, 1984, 29 (04): : 2091 - 2101