2-DIMENSIONAL SIMULATION OF THE DRAIN-CURRENT TRANSIENT EFFECT IN GAAS-MESFETS

被引：11

作者：

LO, SH

LEE, CP

机构：

[1] Institute of Electronics, National Chiao Tung University, Hsinchu

来源：

SOLID-STATE ELECTRONICS | 1991年 / 34卷 / 04期

关键词：

D O I：

10.1016/0038-1101(91)90170-4

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A two-dimensional numerical analysis of the drain-current transient behavior of ion-implantation GaAs MESFETs on undoped semi-insulating substrates is presented. It is found that the EL2 traps with slow transient behaviors play an important role in the drain lag effects. Also, the current overshoot and undershoot can be explained by the capture and the emission of electrons through the EL2 traps, respectively.

引用

页码：397 / 401

页数：5