MICROELECTRONICS EFFECTS AS SEEN ON CRRES

A MicroElectronics Test Package (MEP) measured total dose degradation and single event upsets (SEUs) on 60 device types on the Combined Release and Radiation Effects Satellite (CRRES) in an 18 degrees inclination orbit between 350 km and 36000 km from July 1990 to October 1991. Simultaneous measurements of the high energy particle environment were used to make a direct cause and effect comparison of the energetic particle backgrounds and microelectronic performance characteristics. The galactic cosmic ray background for the period of the CRRES mission was at a minimum. The SEUs experienced from the cosmic ray background were correspondingly few in number, but surprisingly produced an equal probability of upset over an L-shell range of 8.5 Earth radii (R(E)) down to less than 3.0 R(E). Cosmic ray induced upset frequencies in proton sensitive chips were over 2 orders of magnitude lower than those produced by protons in the heart of the inner proton radiation belts. Multiple upsets, those produced when a single particle upsets more than one memory location, were just as common from protons as from cosmic rays.