OXIDATION PROCESSES IN UNDOPED GAAS AND IN SI-DOPED GAAS

被引:14
作者
RIM, A [1 ]
BESERMAN, R [1 ]
机构
[1] TECHNION ISRAEL INST TECHNOL,DEPT PHYS,HAIFA,ISRAEL
关键词
D O I
10.1063/1.354884
中图分类号
O59 [应用物理学];
学科分类号
摘要
Samples of undoped GaAs- and Si-doped GaAs were oxidized at different oxidation temperatures, for different durations. Three different experimental techniques that complete each other were used: Raman scattering, Auger electron spectroscopy, and the ellipsometry technique. The growth of crystalline arsenic layer takes place after oxidation during 10 h, 45 min, and 5 min at temperatures of 400, 500, and 600-degrees-C, respectively. The oxide layer is formed as a result of three competing processes: diffusion in accordance with Fick's law, diffusion with larger diffusion coefficient through the oxide layer, and stopping of diffusion by the crystalline arsenic layer that grows at the GaAs/oxide interface. The effect of Si doping on the oxidation process of GaAs is to impede the crystallization of the arsenic layer, to diminish the diffusion coefficient in the course of the initial stages of the reaction between the oxygen and GaAs, and to cause a small rise in the activation energy.
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页码:897 / 901
页数:5
相关论文
共 17 条
[11]   ARSENIC INCORPORATION IN NATIVE OXIDES OF GAAS GROWN THERMALLY UNDER ARSENIC TRIOXIDE VAPOR [J].
SCHWARTZ, GP ;
GRIFFITHS, JE ;
DISTEFANO, D ;
GUALTIERI, GJ ;
SCHWARTZ, B .
APPLIED PHYSICS LETTERS, 1979, 34 (11) :742-744
[12]   AUGER ANALYSIS OF THERMALLY OXIDIZED GAAS SURFACES [J].
SHIOTA, I ;
MIYAMOTO, N ;
NISHIZAWA, J .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1977, 124 (09) :1405-1409
[13]   GAAS OXIDATION AND THE GA-AS-O EQUILIBRIUM PHASE-DIAGRAM [J].
THURMOND, CD ;
SCHWARTZ, GP ;
KAMMLOTT, GW ;
SCHWARTZ, B .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1980, 127 (06) :1366-1371
[14]  
Tuck B, 1988, ATOMIC DIFFUSION 3 5
[15]  
Wilmsen C. W., 1985, Physics and chemistry of III-V compound semiconductor interfaces, P403
[16]   MOS PROCESSING FOR III-V COMPOUND SEMICONDUCTORS - OVERVIEW AND BIBLIOGRAPHY [J].
WILMSEN, CW ;
SZPAK, S .
THIN SOLID FILMS, 1977, 46 (01) :17-45
[17]   CHEMICAL-COMPOSITION AND FORMATION OF THERMAL AND ANODIC OXIDE-III-V COMPOUND SEMICONDUCTOR INTERFACES [J].
WILMSEN, CW .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1981, 19 (03) :279-289