ARSENIC INCORPORATION IN NATIVE OXIDES OF GAAS GROWN THERMALLY UNDER ARSENIC TRIOXIDE VAPOR

被引：21

作者：

SCHWARTZ, GP

GRIFFITHS, JE

DISTEFANO, D

GUALTIERI, GJ

SCHWARTZ, B

机构：

[1] Bell Laboratories, Murray Hill

来源：

APPLIED PHYSICS LETTERS | 1979年 / 34卷 / 11期

关键词：

D O I：

10.1063/1.90656

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The presence of crystalline and amorphous elemental arsenic in films grown by the thermal oxidation of GaAs under arsenic trioxide vapor was observed using Raman backscattering. Arsenic was detected for all oxidation temperatures (350-500°C) and resulting film thicknesses (∼80-1000 Å). Chemical etching demonstrated that the arsenic is retained in the interfacial region during growth and does not result from physical adsorption of gas-phase species during cooling.

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页码：742 / 744

页数：3

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