IN-DEPTH PROFILES OF OXIDE-FILMS ON GAAS STUDIED BY XPS

被引:36
作者
MIZOKAWA, Y [1 ]
IWASAKI, H [1 ]
NISHITANI, R [1 ]
NAKAMURA, S [1 ]
机构
[1] OSAKA UNIV,INST SCI & IND RES,SUITA,OSAKA 565,JAPAN
关键词
D O I
10.7567/JJAPS.17S1.327
中图分类号
O59 [应用物理学];
学科分类号
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页码:327 / 333
页数:7
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共 12 条
  • [1] Emel'yanov A. V., 1976, Soviet Physics - Crystallography, V20, P373
  • [2] IMPROVED METHOD OF ANODIC-OXIDATION OF GAAS
    HASEGAWA, H
    FORWARD, KE
    HARTNAGEL, HL
    [J]. ELECTRONICS LETTERS, 1975, 11 (03) : 53 - 54
  • [3] IWASAKI H, 1976, SURF SCI, V57, P780
  • [4] AUGER ANALYSIS OF SIO2-SI INTERFACE
    JOHANNESSEN, JS
    SPICER, WE
    STRAUSSER, YE
    [J]. JOURNAL OF APPLIED PHYSICS, 1976, 47 (07) : 3028 - 3037
  • [5] X-RAY PHOTOELECTRON SPECTROSCOPIC STUDIES OF NICKEL-OXYGEN SURFACES USING OXYGEN AND ARGON ION-BOMBARDMENT
    KIM, KS
    WINOGRAD, N
    [J]. SURFACE SCIENCE, 1974, 43 (02) : 625 - 643
  • [6] THERMAL-OXIDATION OF GAAS
    KOSHIGA, F
    SUGANO, T
    [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1977, 16 : 465 - 469
  • [7] OXIDATION OF SI AND GAAS IN AIR AT ROOM-TEMPERATURE
    LUKES, F
    [J]. SURFACE SCIENCE, 1972, 30 (01) : 91 - &
  • [8] MIZOKAWA Y, 7TH P IVC
  • [9] MIZOKAWA Y, 1977, 3RD ICSS VIENN
  • [10] OXIDATION PROPERTIES OF GAAS (110) SURFACES
    PIANETTA, P
    LINDAU, I
    GARNER, CM
    SPICER, WE
    [J]. PHYSICAL REVIEW LETTERS, 1976, 37 (17) : 1166 - 1169