GROWTH OF INGAAS INALAS QUANTUM WELLS ON INP PATTERNED SUBSTRATES BY MOLECULAR-BEAM EPITAXY

被引：21

作者：

TURCO, FS

TAMARGO, MC

HWANG, DM

NAHORY, RE

WERNER, J

KASH, K

KAPON, E

机构：

[1] Bellcore, Red Bank, NJ 07701

来源：

APPLIED PHYSICS LETTERS | 1990年 / 56卷 / 01期

关键词：

D O I：

10.1063/1.102655

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have grown InGaAs/InAlAs quantum wells and InGaAs, InAlAs single layers over InP nonplanar substrates. Photoluminescence, transmission electron microscopy, and energy-dispersive x-ray analysis give evidence for large lateral thickness and compositional variations, which lead to in situ modification of the growth profile. These effects, which differ for InGaAs and InAlAs, reveal the importance of surface migration in (Al,Ga)InAs. Our results demonstrate a tool for in situ lateral patterning of this material system.

引用

页码：72 / 74

页数：3

共 7 条

[1]

Kapon E., 1988, Proceedings of the SPIE - The International Society for Optical Engineering, V944, P80

[2] MOLECULAR-BEAM EPITAXY OF GAAS/ALGAAS SUPERLATTICE HETEROSTRUCTURES ON NONPLANAR SUBSTRATES [J].