GROWTH INTERFACE BREAKDOWN DURING LASER RECRYSTALLIZATION FROM THE MELT

[1] MELTING MODEL FOR PULSING-LASER ANNEALING OF IMPLANTED SEMICONDUCTORS [J]. JOURNAL OF APPLIED PHYSICS, 1979, 50 (02) : 788 - 797

[2] BAERI P, 1980, APPL PHYS LETT, V37

[3] CONSTITUTIONAL SUPERCOOLING DURING CRYSTAL GROWTH FROM STIRRED MELTS .2. EXPERIMENTAL - GALLIUM-DOPED GERMANIUM [J]. SOLID-STATE ELECTRONICS, 1961, 3 (02) : 142 - &

[4] Coriell S. R., 1980, RAPID SOLIDIFICATION, P35

[5] TEM STUDY OF SILICON LASER ANNEALED AFTER THE IMPLANTATION OF LOW SOLUBILITY DOPANTS [J]. JOURNAL OF MICROSCOPY-OXFORD, 1980, 118 (JAN): : 41 - 49

[6] SEGREGATION AND INCREASED DOPANT SOLUBILITY IN PT-IMPLANTED AND LASER-ANNEALED SI LAYERS [J]. APPLIED PHYSICS LETTERS, 1980, 36 (04) : 320 - 322

[7] CULLIS AG, 1979, LASER SOLID INTERACT, P311

[8] GILMER GH, COMMUNICATION

[9] FACETS AND ANOMALOUS SOLUTE DISTRIBUTIONS IN INDIUM-ANTIMONIDE CRYSTALS [J]. PHILOSOPHICAL MAGAZINE, 1959, 4 (47): : 1286 - 1288

[10] HURLE DTJ, UNPUBLISHED

[1] MELTING MODEL FOR PULSING-LASER ANNEALING OF IMPLANTED SEMICONDUCTORS [J]. JOURNAL OF APPLIED PHYSICS, 1979, 50 (02) : 788 - 797

[2] BAERI P, 1980, APPL PHYS LETT, V37

[3] CONSTITUTIONAL SUPERCOOLING DURING CRYSTAL GROWTH FROM STIRRED MELTS .2. EXPERIMENTAL - GALLIUM-DOPED GERMANIUM [J]. SOLID-STATE ELECTRONICS, 1961, 3 (02) : 142 - &

[4] Coriell S. R., 1980, RAPID SOLIDIFICATION, P35

[5] TEM STUDY OF SILICON LASER ANNEALED AFTER THE IMPLANTATION OF LOW SOLUBILITY DOPANTS [J]. JOURNAL OF MICROSCOPY-OXFORD, 1980, 118 (JAN): : 41 - 49

[6] SEGREGATION AND INCREASED DOPANT SOLUBILITY IN PT-IMPLANTED AND LASER-ANNEALED SI LAYERS [J]. APPLIED PHYSICS LETTERS, 1980, 36 (04) : 320 - 322

[7] CULLIS AG, 1979, LASER SOLID INTERACT, P311

[8] GILMER GH, COMMUNICATION

[9] FACETS AND ANOMALOUS SOLUTE DISTRIBUTIONS IN INDIUM-ANTIMONIDE CRYSTALS [J]. PHILOSOPHICAL MAGAZINE, 1959, 4 (47): : 1286 - 1288

[10] HURLE DTJ, UNPUBLISHED