GROWTH INTERFACE BREAKDOWN DURING LASER RECRYSTALLIZATION FROM THE MELT

[11] Jackson K. A., 1980, LASER ELECTRON BEAM, P104

[12] MORPHOLOGICAL INSTABILITY UNDER CONSTITUTIONAL SUPERCOOLING DURING CRYSTAL-GROWTH OF INSB FROM MELT UNDER STABILIZING THERMAL GRADIENT [J]. JOURNAL OF CRYSTAL GROWTH, 1978, 44 (04) : 403 - 413

[13] Kodera H., 1963, JAP J APPL PHYS, V2, P212, DOI [10.1143/JJAP.2.212, DOI 10.1143/JJAP.2.212]

[14] RAMAN MEASUREMENT OF LATTICE TEMPERATURE DURING PULSED LASER-HEATING OF SILICON [J]. PHYSICAL REVIEW LETTERS, 1980, 44 (24) : 1604 - 1607

[15] STABILITY OF PLANAR INTERFACE DURING SOLIDIFICATION OF DILUTE BINARY ALLOY [J]. JOURNAL OF APPLIED PHYSICS, 1964, 35 (02) : 444 - &

[16] INTERFACIAL WAVE OF MAXIMUM GROWTH VELOCITY AT MORPHOLOGICAL INSTABILITY OF PLANAR SOLID-LIQUID INTERFACE IN SOLIDIFICATION OF ALLOYS - APPROXIMATION OF GROWTH FUNCTION OF INTERFACIAL WAVE F(OMEGA) [J]. JOURNAL OF CRYSTAL GROWTH, 1977, 40 (01) : 69 - 77

[17] Sekerka R. F., 1968, Journal of Crystal Growth, V3-4Spe, P71, DOI 10.1016/0022-0248(68)90102-4

[18] A STABILITY FUNCTION FOR EXPLICIT EVALUATION OF MULLINS-SEKERKA INTERFACE STABILITY CRITERION [J]. JOURNAL OF APPLIED PHYSICS, 1965, 36 (01) : 264 - &

[19] GERMANIUM AND SILICON LIQUIDUS CURVES [J]. BELL SYSTEM TECHNICAL JOURNAL, 1960, 39 (01): : 169 - 204

[20] SUPERSATURATED SUBSTITUTIONAL ALLOYS FORMED BY ION-IMPLANTATION AND PULSED LASER ANNEALING OF GROUP-III AND GROUP-V DOPANTS IN SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1980, 51 (01) : 738 - 749

[11] Jackson K. A., 1980, LASER ELECTRON BEAM, P104

[12] MORPHOLOGICAL INSTABILITY UNDER CONSTITUTIONAL SUPERCOOLING DURING CRYSTAL-GROWTH OF INSB FROM MELT UNDER STABILIZING THERMAL GRADIENT [J]. JOURNAL OF CRYSTAL GROWTH, 1978, 44 (04) : 403 - 413

[13] Kodera H., 1963, JAP J APPL PHYS, V2, P212, DOI [10.1143/JJAP.2.212, DOI 10.1143/JJAP.2.212]

[14] RAMAN MEASUREMENT OF LATTICE TEMPERATURE DURING PULSED LASER-HEATING OF SILICON [J]. PHYSICAL REVIEW LETTERS, 1980, 44 (24) : 1604 - 1607

[15] STABILITY OF PLANAR INTERFACE DURING SOLIDIFICATION OF DILUTE BINARY ALLOY [J]. JOURNAL OF APPLIED PHYSICS, 1964, 35 (02) : 444 - &

[16] INTERFACIAL WAVE OF MAXIMUM GROWTH VELOCITY AT MORPHOLOGICAL INSTABILITY OF PLANAR SOLID-LIQUID INTERFACE IN SOLIDIFICATION OF ALLOYS - APPROXIMATION OF GROWTH FUNCTION OF INTERFACIAL WAVE F(OMEGA) [J]. JOURNAL OF CRYSTAL GROWTH, 1977, 40 (01) : 69 - 77

[17] Sekerka R. F., 1968, Journal of Crystal Growth, V3-4Spe, P71, DOI 10.1016/0022-0248(68)90102-4

[18] A STABILITY FUNCTION FOR EXPLICIT EVALUATION OF MULLINS-SEKERKA INTERFACE STABILITY CRITERION [J]. JOURNAL OF APPLIED PHYSICS, 1965, 36 (01) : 264 - &

[19] GERMANIUM AND SILICON LIQUIDUS CURVES [J]. BELL SYSTEM TECHNICAL JOURNAL, 1960, 39 (01): : 169 - 204

[20] SUPERSATURATED SUBSTITUTIONAL ALLOYS FORMED BY ION-IMPLANTATION AND PULSED LASER ANNEALING OF GROUP-III AND GROUP-V DOPANTS IN SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1980, 51 (01) : 738 - 749