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GAAS SCHOTTKY DIODES WITH NEAR-IDEAL CHARACTERISTICS

被引：12
作者：
COLEMAN, DJ
IRVIN, JC
SZE, SM
机构：
来源：
PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS | 1971年 / 59卷 / 07期
关键词：
D O I：
10.1109/PROC.1971.8344
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
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页码：1121 / +
页数：1
相关论文
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[2]   TEMPERATURE DEPENDENCE OF AVALANCHE MULTIPLICATION IN SEMICONDUCTORS [J].
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APPLIED PHYSICS LETTERS, 1966, 9 (06) :242-&
[3]   RICHARDSON CONSTANT FOR THERMIONIC EMISSION IN SCHOTTKY BARRIER DIODES [J].
CROWELL, CR .
SOLID-STATE ELECTRONICS, 1965, 8 (04) :395-&
[4]  
IRVIN JC, 1970 IEEE INT EL DEV
[5]   SILICON SCHOTTKY BARRIER DIODE WITH NEAR-IDEAL I-V CHARACTERISTICS [J].
LEPSELTE.MP ;
SZE, SM .
BELL SYSTEM TECHNICAL JOURNAL, 1968, 47 (02) :195-+
[6]   FIELD SINGULARITY AT EDGE OF AN ELECTRODE ON A SEMICONDUCTOR SURFACE [J].
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BELL SYSTEM TECHNICAL JOURNAL, 1970, 49 (06) :1183-+
[7]  
SZE SM, 1969, PHYSICS SEMICONDUCTO, pCH8
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