MEASUREMENT OF HOLE VELOCITY IN N-TYPE INGAAS

[1] INGAAS PIN PHOTODETECTORS WITH MODULATION RESPONSE TO MILLIMETER WAVELENGTHS [J]. ELECTRONICS LETTERS, 1985, 21 (18) : 812 - 814

[2] EICHEN E, 1987, C P

[3] HOLWAY LH, 1979, IEEE CORNELL C HIGH, P199

[4] TRANSIT-TIME CONSIDERATIONS IN P-I-N DIODES [J]. JOURNAL OF APPLIED PHYSICS, 1964, 35 (3P1) : 622 - &

[5] MARSH JH, 1980, I PHYS C SER, V56, P621

[6] FREQUENCY-RESPONSE OF AN INGAASP VAPOR-PHASE REGROWN BURIED HETEROSTRUCTURE LASER WITH 18 GHZ BANDWIDTH [J]. APPLIED PHYSICS LETTERS, 1986, 49 (03) : 128 - 130

[7] LIQUID-PHASE EPITAXIAL-GROWTH, ELECTRON-MOBILITY AND MAXIMUM DRIFT VELOCITY OF IN1-XGAXAS (X ALMOST EQUAL TO 0.5) FOR MICROWAVE DEVICES [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1977, 16 : 239 - 243

[8] 20 GHZ BANDWIDTH INGAAS PHOTODETECTOR FOR LONG-WAVELENGTH MICROWAVE OPTICAL LINKS [J]. ELECTRONICS LETTERS, 1985, 21 (11) : 469 - 471

[9] WINDHORN TH, 1982, ELECTRON DEVIC LETT, V3, P18, DOI 10.1109/EDL.1982.25459

[1] INGAAS PIN PHOTODETECTORS WITH MODULATION RESPONSE TO MILLIMETER WAVELENGTHS [J]. ELECTRONICS LETTERS, 1985, 21 (18) : 812 - 814

[2] EICHEN E, 1987, C P

[3] HOLWAY LH, 1979, IEEE CORNELL C HIGH, P199

[4] TRANSIT-TIME CONSIDERATIONS IN P-I-N DIODES [J]. JOURNAL OF APPLIED PHYSICS, 1964, 35 (3P1) : 622 - &

[5] MARSH JH, 1980, I PHYS C SER, V56, P621

[6] FREQUENCY-RESPONSE OF AN INGAASP VAPOR-PHASE REGROWN BURIED HETEROSTRUCTURE LASER WITH 18 GHZ BANDWIDTH [J]. APPLIED PHYSICS LETTERS, 1986, 49 (03) : 128 - 130

[7] LIQUID-PHASE EPITAXIAL-GROWTH, ELECTRON-MOBILITY AND MAXIMUM DRIFT VELOCITY OF IN1-XGAXAS (X ALMOST EQUAL TO 0.5) FOR MICROWAVE DEVICES [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1977, 16 : 239 - 243

[8] 20 GHZ BANDWIDTH INGAAS PHOTODETECTOR FOR LONG-WAVELENGTH MICROWAVE OPTICAL LINKS [J]. ELECTRONICS LETTERS, 1985, 21 (11) : 469 - 471

[9] WINDHORN TH, 1982, ELECTRON DEVIC LETT, V3, P18, DOI 10.1109/EDL.1982.25459