ASPECTS OF THE DEFECT REACTIONS RELATED TO CARBON IMPURITY IN SILICON

被引：29

作者：

LONDOS, CA

机构：

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1988年 / 27卷 / 11期

关键词：

D O I：

10.1143/JJAP.27.2089

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：2089 / 2093

页数：5

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