AUGER-ELECTRON SPECTROSCOPY, ELECTRON-ENERGY-LOSS SPECTROSCOPY, AND X-RAY PHOTOEMISSION SPECTROSCOPY STUDIES OF OXYGEN-ADSORPTION ON THE INP(111)-(1X1) SURFACE

被引：12

作者：

DAI, DX

ZHU, FR

机构：

[1] Surface Physics Laboratory, Fudan University

来源：

PHYSICAL REVIEW B | 1991年 / 43卷 / 06期

关键词：

D O I：

10.1103/PhysRevB.43.4803

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Auger-electron spectroscopy, electron-energy-loss spectroscopy, and x-ray photoemission spectroscopy measurements have been used to study oxygen adsorption on InP(111)-(1 x 1) surfaces and the initial stage of oxidation. It has been observed that oxygen is adsorbed on both surface In and P atoms on InP(111)-(1 x 1) surfaces at an oxygen exposure of 10(4) L O2. (Here 1 L = 10(-6) Torr sec.) The mechanism of adsorption and oxidation is briefly discussed.

引用

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页码：4803 / 4808

页数：6

相关论文

共 9 条

[1] EFFECT OF IMPURITIES ON THE THERMAL-OXIDATION PROCESS IN INP [J].

BESERMAN, R ;

CYTERMANN, C ;

BRENER, R ;

LABORDE, J ;

SALZMAN, I ;

WEYERS, M ;

BRAUERS, A ;

BALK, P .

APPLIED PHYSICS LETTERS, 1990, 56 (10) :919-921

[2] PHOTOEMISSION-STUDIES OF THE INITIAL-STAGES OF OXIDATION OF GASB AND INP [J].

CHYE, PW ;

SU, CY ;

LINDAU, I ;

GARNER, CM ;

PIANETTA, P ;

SPICER, WE .

SURFACE SCIENCE, 1979, 88 (2-3) :439-460

[3]

GOLETTI C, 1989, VUOTO, V19, P158

[4] SOME THOUGHTS ON EXISTENCE OF EMPTY SURFACE-STATES AND EFFECT OF SURFACE ORDER ON SORPTION - INTRODUCTORY-REMARKS [J].

MARK, P ;

SO, E ;

BONN, M .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1977, 14 (04) :865-869

[5] SURFACE DONORS AND ACCEPTORS ON GAAS AND INP EXPOSED TO OXYGEN [J].

NEDOLUHA, A .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1982, 21 (02) :429-433

[6] LOW-ENERGY ELECTRON LOSSES BY PLASMON EXCITATIONS AS CONTROL MEANS OF THE GROWTH OF EPITAXIAL LAYERS [J].

OLIVIER, J .

JOURNAL OF APPLIED PHYSICS, 1980, 51 (10) :5406-5407

[7] OXIDATION PROPERTIES OF GAAS (110) SURFACES [J].

PIANETTA, P ;

LINDAU, I ;

GARNER, CM ;

SPICER, WE .

PHYSICAL REVIEW LETTERS, 1976, 37 (17) :1166-1169

[8] DEVELOPMENT AND CONFIRMATION OF THE UNIFIED MODEL FOR SCHOTTKY-BARRIER FORMATION AND MOS INTERFACE STATES ON III-V COMPOUNDS [J].

SPICER, WE ;

EGLASH, S ;

LINDAU, I ;

SU, CY ;

SKEATH, PR .

THIN SOLID FILMS, 1982, 89 (04) :447-460

[9] SURFACE STUDIES OF INP BY ELECTRON-ENERGY LOSS SPECTROSCOPY AND AUGER-ELECTRON SPECTROSCOPY [J].

TU, CW ;

SCHLIER, AR .

APPLICATIONS OF SURFACE SCIENCE, 1982, 11-2 (JUL) :355-361